Rajasthan Technical Education Second Year Paper 2016 Basics of Electronic Devices and Circuits

Rajasthan Technical Education Second Year Paper 2016 Basics of Electronic Devices and Circuits

In an N-type semiconductor, the position of the fermi-level
(a) is lower than the centre of energy-gap
(b) is at the centre of energy-gap
(c) is higher than the centre of energy-gap
(d) can be anywhere depending upon the doping concentration

The Hall-effect occurs only
(a) In metals
(b) In N-type semiconductor
(c) In intrinsic semiconductor
(d) All of the above

An instrinsic semiconductor, at the absolute zero temperature
(a) behaves like an insulator
(b) has a large number of holes
(c) has few holes and same number of electrons
(d) behaves like a metallic conductor

The donor type impurities
(a) create excess holes
(b) can be added to germanium but not to silicon
(c) must have only three valence electrons
(d) must have only five valence electrons

The depletion region of P-N junction is one, which is deplected of
(a) Atoms
(b) Mobile charges
(c) Immobile charges
(d) None of these above

A silicon P-N junction in forward conduction has a voltage drop-closes to
(a) 0.1 volts
(b) 0.7 volts
(c) 1.7 volts
(d) 2.1 volts

When the temperature of an instrinsic semiconductor is increased, then
(a) Resistance of semiconductor increases
(b) Heat energy, decreases the atomic radius
(c) Holes are created in the conduction band
(d) Energy of the atoms is increased

The conventional current in a P-N junction diode flows
(a) From positive to negative
(b) from negative to positive
(c) In the direction opposite to the electron flow
(d) Both (a) and (c) above

The Light Emitting Diode (LED)
(a) Is usually made from silicon
(b) Uses a reverse-bias junction
(c) Gives a light output which increases with the increase in temperature
(d) Depends on the recombination of holes and electrons

Avalanche breakdown in a semiconductor diode occurs when
(a) forward current, exceeds a certain level
(b) REverse-bias exceeds a certain value
(c) Forward-bias exceeds a certain value
(d)The potential-barrier is reduced to zero

In a PNP transistor with normal bias
(a) Only holes cross the collector junction
(b) Only majority carriers cross the collector junction
(c) The collector junction has a low resistance
(d) The emitter junction is forward biased and collector junction is reverse biased

For transistor action
(a) The collector region, must be more heavily doped than the base region
(b) The base region must be N-type material
(c) The base region must be very narrow
(d) The collector-base junction must be forward biased.

A transistor connected in common-base configuration has
(a) a low input resistance and high output resistance
(b) a high input resistance and low output resistance
(c) Both the input and output resistance are low
(d) Both the input and output resistances are high

Compared to CB amplifier, the CE amplifier has
(a) lower input resistance
(b) higher output resistance
(c) lower current amplification
(d) higher current amplification