Rajasthan Technical Education Second Year Paper 2016 Concept of Electronic Devices and Circuits

Rajasthan Technical Education Second Year Paper 2016 Concept of Electronic Devices and Circuits

In triode valve the potential of grid (with respect to cathode) is usually
(a) Zero
(b) Negative
(c) positive
(d) Zero or positive

In which material, conduction band and valance band overlape?
(a) insulator
(b) Conductor
(c) Both conductor and semiconductor
(d) Semiconductor

Trivalent impurity elements are
(a) Silicon, Germanium
(b) Indium, gallium
(c) Antimony, boron
(d) Carbon

When the reverse bias of p-n junction is increased, then depletion layer
(a) becomes narrow
(b) widens
(c) remains the same
(d) reduce to zero

In intrinsic semiconductor, the Fermi level lies
(a) near the conduction band
(b) near valance band
(c) at the centre of forbidden energy gap
(d) may be anyshere is gap

Hall effect can be used to measure
(a) electric field intensity
(b) magnetic field intensity
(c) charge carrier concentration
(d) None of these

A zenner diode is used in
(a) amplifier circuit
(b) voltage regulator circuit
(c) both circuits (a) and (b)
(d) None of these

A varactor diode has
(a) A fixed capacitance
(b) A fixed inductance
(c) A voltage variable capacitance
(d) A current variable capacitance

In photo diode, the current is due to
(a) Majority charge carriers
(b) Minority charge carrriers
(c) Both majority and minority carriers
(d) Either (a) or (b)

An LED is
(a) An ohmic device
(b) A display device
(c) A voltage regulator device
(d) All of the above

The most heavily dopped region in a transistor is
(a) base
(b) Collector
(c) emitter
(d) both emitter and collector