Rajasthan Technical Education Second Year Paper 2016 Electronic Devices and Circuits

Rajasthan Technical Education Second Year Paper 2016 Electronic Devices and Circuits

The resistance temperature coefficient of an instrinsic semiconductor is
(a) Positive
(b) Negative
(c) Zero
(d) None of these

The energy gap between conduction band and valance band for the insulator is approximately
(a) 1 eV
(b) 5 eV
(c) Zero
(d) 0.7 eV

A P-type semiconductor as a whole is
(a) Positively charged
(b) Negatively charged
(c) Electrically Neutral
(d) Positive or Negative depending upon doping

To obtain 5V regulated output, the zener breakdown voltage for zener diode must be
(a) 5 mV
(b) 50 mV
(c) 5000 mV
(d) 0.7 V

Which diode contains highest doping ?
(a) LED
(b) Zener diode
(c) Tunnel diode
(d) Varactor diode

Highest input resistance is obtain in _______configuration of transistor
(a) CB
(b) CC
(c) CE
(d) None of these

Bipolar Junction Transistor is a _______controlled device
(a) Current
(b) Voltage
(c) Power
(d) None of the above

When transistor is operating as a switch then biasing of both junction msut be
(a) Forward, Reverse
(b) Reverse, Reverse
(c) Reverse, Forward
(d) Forward, Forward

Which component is not suitable for transistor bias compensation technique ?
(a) Thermister
(b) Diode
(c) Inductor
(d) Sensistor

Thermal runway condition can be avoided using
(a) R-C Filter
(b) Amplifier
(c) Voltage regulator
(d) Heat Sink

Input impedance of FET is
(a) Low
(b) High
(c) Medium
(d) None of these

The name of MOSFET terminals are
(a) anode, cathode, gate
(b) Drain, collector, gate
(c) Base, Emitter, Source
(d) Gate, Source, Drain

The minimum number of diode is required for full wave bridge rectifire
(a) 2
(b) 4
(c) 6
(d) 1