Objective questions on Nanoelectronics

M.Sc Electronics Semester IV Exam Oct/Nov 2019 Shivaji University Kolhapur

In ____lithography, a film of water or another dielectric medium is inserted in between the lens and wafer.
(a) Optical
(b) electron beam
(c) immersion
(d) ultraviolet

For a ______ photoresist, the resist material is initially insoluble and through a chemical reaction when exposed to light it become soluble.
(a) Positive
(b) Negative
(c) lithography
(d) IC

The transistor having 100 nm dimensions obeys _____ principle.
(a) quantum
(b) classical physics
(c) both a & b
(d) None of these

The parabolic as well as square well wave functions solutions are _____ due to the symmetry of the potential well.
(a) symmetric or antisymmetric
(b) sine functions
(c) neither asymmetric or antisymmetric
(d) cosine functions

The immersion lithography is currently considered for ____ chip.
(a) 32 nm
(b) 193 nm
(c) 134 nm
(d) 90 nm

The energy spectrum in case of 0DEG system is totally ______
(a) diverges
(b) discrete
(c) parabolic
(d) staircase

The synonym of MODFET is _______
(a) modulation doped FET
(b) modulation oxide doped FET
(c) modulation oxide FET
(d) modulated oxide doped FET

The SiGe heterojunctions have ____ lattice constant difference between Si and Ge, which is about 4%.
(a) Small
(b) large
(c) equal
(d) none of these

The OLED’s are an electroluminescent organic material between two _____ of different work functions.
(a) semiconductors
(b) nonconductors
(c) insulator
(d) conductors

In case of Type I multiple quantum well (MQW) the wells for hole and electron are located in the _____ space location.
(a) alternate
(b) same
(c) different
(d) triangular

The split gate technique is used to _____ the electron gas dimensionality.
(a) increase
(b) decrease
(c) equal
(d) None of these

For a ____ photoresist, the resist material is initially soluble and through a chemical reaction when exposed to light it become insoluble.
(a) Positive
(b) negative
(c) lithography
(d) IC